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| Datasheet File OCR Text: |
| Micro-Electro-Magnetical Tech Co. SCHOTTKY DIE SPECIFICATION General Description: 100 V 2 A ( Low Ir) ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Ir=1mA(for wafer form) Ir=0.5mA (for dice form) Average Rectified Forward Current Maximum Instantaneous Forward Voltage @ 1 Amperes, Ta=25C @ 2 Amperes, 25C Maximum Instantaneous Reverse Voltage VR= 100 Volt, Ta=25C Maximum Junction Capacitance @ 0V, 1MHZ MAXIMUM RATINGS Nonrepetitive Peak Surge Current Operating Junction Temperature Storage Temperatures SYM VRRM IFAV VF MAX TYPE: MBR2100 Single Anode Spec. Limit 100 2 0.74 0.82 0.1 0.73 0.81 0.09 Die Sort 105 UNIT Volt Amp Volt IR MAX Cj MAX IFSM Tj TSTG mA pF 50 -65 to +125 -65 to +125 Amp C C Specification apply to die only. Actual performance may degrade when assembled. MEMT does not guarantee device performance after assembly. Data sheet information is subjected to change without notice. DICE OUTLINE DRAWING DIM A B C D ITEM Die Size Top Metal Pad Size Passivation Seal Thickness (Min) Thickness (Max) um2 1245 1025 1203 254 305 Mil2 49.01 40.3 47.3 10 12 A C B Top-side Metal SiO2 Passivation P+ Guard Ring Back-side Metal PS: (1)Cutting street width is around 80um(3.14mil). (2)Both of top-side and back-side metals are Ti/Ni/Ag. D |
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